SEM-Guided Low-kV FIB Finishing for Leading-Edge Semiconductor Failure Analysis

Discover how the ZEISS Crossbeam 750 FIBSEM sets a new benchmark for precise TEM lamella prep, tomography, and advanced nanofabrication. This delivers better resolution, better SNR, larger usable FOV, and shorter acquisition times. Learn how uninterrupted FIB milling will reduce damage and rework, accelerate time to TEM, and increase first pass success—so your FA, yield, and materials teams make faster, confident data driven decisions.

Join us to discover how the new ZEISS Crossbeam 750 with its see while you mill capability delivers precision and clarity—every time—for demanding FIB-SEM workflows. Designed for extremely challenging TEM lamella preparation, tomography, advanced nanofabrication, and APT‑ready lift‑out, Crossbeam 750 combines a new Gemini 4 SEM objective lens, a double deflector, and a next‑generation scan generator to elevate both image quality and process confidence. You’ll learn how better resolution and better SNR translate into more image detail and shorter acquisition times, while the low‑kV FIB performance enables more precise lamella prep.

We’ll demonstrate High Dynamic Range (HDR) Mill + SEM—an interwoven SEM/FIB scanning mode that suppresses FIB‑generated background. This enables immediate, clean visual feedback, even during nudging the FIB pattern live while milling . The result: confident endpointing with uninterrupted FIB milling and pristine, metrology‑grade surfaces with the lowest possible sample damage.

This session is ideal for semiconductor failure analysists, yield teams and materials scientists seeking faster time‑to‑TEM, higher first‑pass success, and consistent outcomes at low kV. See how Crossbeam 750 empowers you to make earlier stop‑milling decisions, cut rework, and reliably plan turnaround time—so you can move from sample to insight with confidence.

Register now for this free webinar!

المصدر: IEEE Spectrum